Fixed channel assignment in cellular radio networks using a modified genetic algorithm

With the limited frequency spectrum and an increasing demand for cellular communication services, the problem of channel assignment becomes increasingly important. However, finding a conflict-free channel assignment with the minimum channel span is NP hard. Therefore, we formulate the problem by assuming a given channel span. Our objective is to obtain a conflict-free channel assignment among the cells, which satisfies both the electromagnetic compatibility (EMC) constraints and traffic demand requirements. We propose an approach based on a modified genetic algorithm (GA). The approach consists of a genetic-fix algorithm that generates and manipulates individuals with fixed size (i.e., in binary representation, the number of ones is fixed) and a minimum-separation encoding scheme that eliminates redundant zeros in the solution representation. Using these two strategies, the search space can be reduced substantially. Simulations on the first four benchmark problems showed that this algorithm could achieve at least 80%, if not 100%, convergence to solutions within reasonable time. In the fifth benchmark problem, our algorithm found better solutions with shorter channel span than any existing algorithms. Such significant results indicate that our approach is indeed a good method for solving the channel-assignment problem. © 1998 IEEE.published_or_final_versio

Centralized broadcast scheduling in packet radio networks via genetic-fix algorithms

An important, yet difficult, problem in the design of a packet radio network is the determination of a conflict-free broadcast schedule at a minimum cycle length. In this letter, we first formulate the problem via a within-two-hop connectivity matrix and then, by assuming a known cycle length, determine a conflict-free scheduling pattern using a centralized approach that exploits the structure of the problem via a modified genetic algorithm. This algorithm, called genetic-fix, generates and manipulates individuals with fixed size (i.e., in binary representation, the number of ones is fixed) and therefore, can reduce the search space substantially. We also propose a method to find a reasonable cycle length and shorten it gradually to obtain a near-optimal one. Simulations on three benchmark problems showed that our approach could achieve 100% convergence to solutions with optimal cycle length within reasonable time.published_or_final_versio

Surface Morphology Evolution of GaAs by Low Energy Ion Sputtering

Low energy Ar+ion sputtering, typically below 1,200 eV, of GaAs at normal beam incident angle is investigated. Surface morphology development with respect to varying energy is analyzed and discussed. Dot-like patterns in the nanometer scale are obtained above 600 eV. As the energy approaches upper eV range regular dots have evolved. The energy dependent dot evolution is evaluated based on solutions of the isotropic Kuramoto-Sivashinsky equation. The results are in agreement with the theoretical model which describes a power law dependency of the characteristic wavelength on ion energy in the ion-induced diffusion regime

Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators

In this work, we investigated the effects of quantum dot (QD) annealing (as-grown, 600°C-annealed, and 750°C-annealed) on the preliminary performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators (QD-EAMs). Both extinction ratio and insertion loss were found to vary inversely with the annealing temperature. Most importantly, the 3-dB response of the 750°C-annealed lumped-element QD-EAM was found to be 1.6 GHz at zero reverse bias voltage - the lowest reverse bias voltage reported. We believe that this work will be beneficial to researchers working on on-chip integration of QD-EAMs with other devices since energy consumption will be an important consideration

Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers

A new measure to enhance the performance of InAs quantum dot solar cell is proposed and measured. One monolayer AlAs is deposited on top of InAs quantum dots (QDs) in multistack solar cells. The devices were fabricated by molecular beam epitaxy. In situ annealing was intended to tune the QD density. A set of four samples were compared: InAs QDs without in situ annealing with and without AlAs cap layer and InAs QDs in situ annealed with and without AlAs cap layer. Atomic force microscopy measurements show that when in situ annealing of QDs without AlAs capping layers is investigated, holes and dashes are present on the device surface, while capping with one monolayer AlAs improves the device surface. On unannealed samples, capping the QDs with one monolayer of AlAs improves the spectral response, the open-circuit voltage and the fill factor. On annealed samples, capping has little effect on the spectral response but reduces the short-circuit current, while increasing the open-circuit voltage, the fill factor and power conversion efficiency

Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator

In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of an electroabsorption modulator (EAM). The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 μm, width of 10 μm, and length of 1.0 mm. Photocurrent measurement reveals a Stark shift of ~5 meV (~7 nm) at reverse bias of 3 V (75 kV/cm) and broadening of the resonance peak due to field ionization of electrons and holes was observed for E-field larger than 25 kV/cm. Investigation at wavelength range of 1,300–1320 nm reveals that the largest absorption change occurs at 1317 nm. Optical transmission measurement at this wavelength shows insertion loss of ~8 dB, and extinction ratio of ~5 dB at reverse bias of 5 V. Consequently, methods to improve the performance of the QD-EAM are proposed. We believe that QDs are promising for EAM and the performance of QD-EAM will improve with increasing research efforts

Novel Tunable Fiber Optic Edge Filter Based on Modulating Chirp Rate of pi-Phase-Shifted Fiber Bragg Grating

We propose and experimentally demonstrate a novel tunable fiber optic edge filter based on modulating the chirp rate of a pi-phase-shifted fiber Bragg grating (FBG) operated in reflection mode. The phase shift induced notch in the reflection spectrum is utilized as the edge filter. The dependence of the pi-phase-shifted FBG's spectral response on the chirp rate has been numerically studied in detail and experimentally confirmed for the first time. The linear wavelength range of this edge filter can be tuned by changing the chirp rate of FBG. A fiber optic edge filter is further obtained experimentally and tested as a wavelength interrogator, which is in a good agreement with numerical results. The proposed edge filter has advantages of simple-structure, cost-effectiveness, high sensitivity, and flexible tunable, thus opening up some applications, especially as wavelength interrogator in small wavelength range

Protein trafficking through the endosomal system prepares intracellular parasites for a home invasion

Toxoplasma (toxoplasmosis) and Plasmodium (malaria) use unique secretory organelles for migration, cell invasion, manipulation of host cell functions, and cell egress. In particular, the apical secretory micronemes and rhoptries of apicomplexan parasites are essential for successful host infection. New findings reveal that the contents of these organelles, which are transported through the endoplasmic reticulum (ER) and Golgi, also require the parasite endosome-like system to access their respective organelles. In this review, we discuss recent findings that demonstrate that these parasites reduced their endosomal system and modified classical regulators of this pathway for the biogenesis of apical organelles

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure

We have studied the electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure, i.e., with an In0.15Ga0.85As quantum well (QW) as capping layer above InAs quantum dots (QDs), via temperature-dependent photoluminescence, photo-modulated reflectance, and rapid thermal annealing (RTA) treatments. It is shown that the carrier transfer via wetting layer (WL) is impeded according to the results of temperature dependent peak energy and line width variation of both the ground states (GS) and excited states (ES) of QDs. The quenching of integrated intensity is ascribed to the thermal escape of electron from the dots to the complex In0.15Ga0.85As QW + InAs WL structure. Additionally, as the RTA temperature increases, the peak of PL blue shifts and the full width at half maximum shrinks. Especially, the intensity ratio of GS to ES reaches the maximum when the energy difference approaches the energy of one or two LO phonon(s) of InAs bulk material, which could be explained by phonon-enhanced inter-sublevels carrier relaxation in such asymmetric dot-in-well structure

Conscious monitoring and control (reinvestment) in surgical performance under pressure.

Research on intraoperative stressors has focused on external factors without considering individual differences in the ability to cope with stress. One individual difference that is implicated in adverse effects of stress on performance is "reinvestment," the propensity for conscious monitoring and control of movements. The aim of this study was to examine the impact of reinvestment on laparoscopic performance under time pressure